2SK2710
器件描述:MOSFET
文件大小:34.94KB,共1页
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器件资料摘要:
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 600
V(BR) DSS 600 V ID = 100µA, VGS = 0V
V
VGSS ±30
IGSS ±100 nA VGS = ±30V
V
ID ±12
IDSS 100 µAVDS = 600V, VGS = 0V
A
ID (pulse) ±48
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mA
A
PD 85 (Tc = 25ºC)
Re (yfs) 7.5 11
3.0
SVDS = 20V, ID = 6A
W
EAS 400
RDS (on) 0.42 0.55
1.5
Ω VGS = 10V, ID = 6A
ISD = 12A, VGS = 0V
mJ
Tch 150
Ciss 1900 pF
VDS = 10V, f = 1.0MHz,
VGS = 0V
ID = 6A, VDD = 250V,
RL = 20.8Ω, VGS = 10V,
See Figure 2 on Page 5.
ºC
IAS 12 A
Tstg –55 to +150
Coss 410 pF
Crss 240 pF
ºC
td (on) 35 ns
tr
td (off)
tf
VSD
45 ns
160 ns
70 ns
0.95 V
Symbol Unit Conditions
Ratings
typ maxmin
38
*
2
*
1
01020
6
2
0
4
12
8
10
515
5V
VGS = 10V
0
0
21210864
0.1
0.2
0.3
0.4
0.5
–50
0
0 50 100 150
0.4
0.2
0.8
0.6
1.0
1.2
4 5 10 20
0
12
8
10
6
4
VDS = 20V
25ºC
125ºC
0246 8
0
2
4
6
10
TC = –55ºC
10V
5.5V
2
0.05
0.3
0.1 0.5 1
0.5
1
20
10
5
125
8
VGS = 4.5V
25ºC
125ºC
VDS = 20V
TC = –55ºC
ID = 12A
ID = 6A
ID = 6A
VGS = 10V
0 1020304050
50
100
500
1000
10000
5000
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
0
0 0.5 1.0 1.5
4
8
12
10
6
2
5V,10V
VGS = 0V
3 5 10 50 100 500 700
0.1
0.5
1
5
50
10
ID (pulse) max
ID max
D
C O
PER
ATIO
N
R
D
S
(O
N
)
LIMITED
1ms (1shot)
100
µ
s (1shot)
0
20
50
80
90
0 50 100 150
With infinite heatsink
Without heatsink
70
60
40
10
30
2SK2710
External dimensions 2 ...... FM100
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 30V, L = 5.5mH, IL = 12A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
(Tc=25ºC)
R
DS
(ON)
(
Ω
) R
DS
(ON)
(
Ω
)
Re
(yfs)
(S)
Capacitance (pF)
Ta (ºC)
V
DS
(V)
VDS — ID Characteristics
ID — Re (yfs) Characteristics
VDS — Capacitance Characteristics VSD — IDR Characteristics Ta — PD CharacteristicsSafe Operating Area
VGS — VDS Characteristics TC — RDS (ON) Characteristics
VGS — ID Characteristics ID — RDS (ON) Characteristics
VDS (V)VDS (V) VSD (V)
I
DR
(A)
I
D
(A)
P
D
(W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
I
D
(A)
I
D
(A)