EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2SK2691-01R

器件描述:N-channel MOS-FET
器件厂商:FUJI [Fuji Electric]
文件大小:402.81KB,共3页
Sponsor by e络盟
器件资料摘要:
2SK2691-01R
N-channel MOS-FET
FAP-IIIB Series 60V 0,01Ω 70A 100W
>Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
>Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
60 V
Continous Drain Current I
D
70 A
Pulsed Drain Current I
D(puls)
280 A
Gate-Source-Voltage V
GS
±20 V
Maximum Avalanche Energy E
AV
685 mJ*
Max. Power Dissipation P
D
100 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
* L=0,186mH, V
CC
=24V
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 60 V
Gate Threshhold Voltage V
GS(th)
I
D
=1m A V
DS=
V
GS
1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=40A V
GS
=4V 0,012 0,017 Ω
V
GS
=10V 0,0075 0,01 Ω
Forward Transconductance g
fs
I
D
=40A V
DS
=25V 25 55 S
Input Capacitance C
iss
V
DS
=25V 3500 5250 pF
Output Capacitance C
oss
V
GS
=0V 1250 1870 pF
Reverse Transfer Capacitance C
rss
f=1MHz 360 540 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=30V 15 23 ns
t
r
I
D
=75A 75 120 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 190 285 ns
t
f R GS =10 Ω
110 165 ns
Avalanche Capability I
AV
L = 100µH T
ch
=25°C 70 A
Diode Forward On-Voltage V
SD
I
F
=160A V
GS
=0V T
ch
=25°C 1,15 1,65 V
Reverse Recovery Time t
rr
I
F
=80A V
GS
=0V 75 120 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 0,17 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 30 °C/W
R
th(ch-c)
channel to case 1,25 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98