2SK2687-01 N-channel MOS-FET
FAP-IIS Series 30V 0,01Ω ±50A 60W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 30 V
Continous Drain Current I D ±50 A
Pulsed Drain Current I D(puls) ±200 A
Gate-Source-Voltage V GS ±16 V
Maximum Avalanche Energy E AV 520 mJ*
Max. Power Dissipation P D 60 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
* L=0,277mH, V CC =12V
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV DSS I D =1mA V GS =0V 30 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I DSS V DS =30V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±16V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =25A V GS =4V 0,012 0,017 Ω
V GS =10V 0,0075 0,01 Ω
Forward Transconductance g fs I D =25A V DS =25V 22 45 S
Input Capacitance C iss V DS =25V 2750 4130 pF
Output Capacitance C oss V GS =0V 1300 1950 pF
Reverse Transfer Capacitance C rss f=1MHz 600 900 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =15V 13 20 ns
t r I D =50A 180 270 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 55 83 ns
t f R GS =10 Ω 150 230 ns
Avalanche Capability I AV L = 100µH T ch =25°C 50 A
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,14 1,71 V
Reverse Recovery Time t rr I F =2xI DR V GS =0V 85 130 ns
Reverse Recovery Charge Q rr -dI F /d t =100A/µs T ch =25°C 0,17 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 75 °C/W
R th(ch-c) channel to case 2,08 °C/W