2SK2684L
器件描述：Silicon N Channel DV-L MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：51.01KB，共10页
Sponsor by e络盟器件资料摘要：
2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET
High Speed Power Switching
ADE-208-542
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 20 mW typ. (V
GS
= 10V, I
D
= 15 A)
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Silicon N Channel DV–L MOS FET
High Speed Power Switching
ADE-208-542
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 20 mW typ. (V
GS
= 10V, I
D
= 15 A)
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S