2SK2631
No.6600-1/5
Features
•
Low ON resistance.
• Smaller amount of total gate charge.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6600
2SK2631
Package Dimensions
unit : mm
2083B
unit : mm
2092B
[2SK2631]
63000 TS IM TA-3024
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8 1.6
7.5
0.5
1.2
2.3
0.5
1 23
4
2.3 2.3
Ultrahigh-Speed Switching Applications
[2SK2631]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
6.5 2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85 0.5
1.2
0 to 0.2
2.3 2.3
0.6
12
4
3