© 1995
PRELIMINARY DATA SHEET
SILICON POWER MOS FIELD EFFECT TRANSISTOR
2SK2597
N-CHANNEL SILICON POWER MOSFET
FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE
POWER AMPLIFICATION
FEATURES PACKAGE DRAWING (Unit: mm)
• High output, high gain
PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)
PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)
• Low intermodulation distortion
• Covers all base station frequencies such as 800-MHz PDC
and GSM
• High-reliability gold electrodes
• Hermetic sealed package
• Internal matching circuit
• Push-pull structure
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Symbol Ratings Unit
Drain-source voltage VDS 60 V
Gate-source voltage VGS 7V
Drain current (D.C.) ID 15
Note
A
Total power dissipation PT 290 W
Thermal resistance Rth 0.6 ˚C/W
Channel temperature Tch 200 ˚C
Storage temperature Tstg –65 to +150 ˚C
Note Per side
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Gate leakage current IGSS VGS = 7 V 1 µA
Cut-off voltage VGS(off) VDS = 5 V, ID = 50 mA 1.5 4 V
Drain current IDSS VDS = 60 V 2 mA
Mutual conductance gm VDS = 5 V, ID = 3 A, ∆ID = 100 mA 2.0 S
Output power PO f = 960 MHz, VDD = 30 V 80 90 W
Drain efficiency η D
IDQ = 200 mA × 2, Pin = 40 dBm
35 40 %
Linear gain GL f = 960 MHz, VDD = 30 V 11 12 dB
IDQ = 200 mA × 2, Pin = 30 dBm
Third intermodulation distortion IM3 f = 900 MHz, ∆f = 0.1 MHz, VDD = 30 V –38 dBc
IDQ = 200 mA × 2, PO = 42 dBm
G1 G2
D1 D2
3.3±0.3S
45˚45˚
28.0±0.3
13.5±0.3
3.2±0.2 3.2±0.2
1.4
±0.3
11.4±0.3 19.4±0.4
21.5±0.3
4.7MAX.
1.5±0.2
0.1
2.5±0.2
G1, G2: gate
D1, D2: drain
S : source
Flange is connected to the source.
φ
Document No. P10252EJ1V0DS00 (1st edition)
Date Published October 1995 P
Printed in Japan
The information in this document is subject to change without notice.