1
Silicon Junction FETs (Small Signal)
unit: mm
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
n Features
l Low noies, high gain
l High gate to drain voltage V
GDO
l Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
- 55
- 55
±30
10
125
125
- 55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
| Y
fs
|
C
iss
C
rss
NF
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= - 30V, V
DS
= 0
I
G
= - 100m A, V
DS
= 0
V
DS
= 10V, I
D
= 10m A
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100kW
f = 100Hz
min
1
55
2.5
max
20
10
- 5
Unit
mA
nA
V
V
mS
pF
pF
dB
typ
80
7.5
6.5
1.9
2.5
Marking Symbol (Example): 2B
*
I
DSS
rank classification
Runk
I
DSS
(mA)
Marking Symbol
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
1: Source
2: Drain EIAJ: SC-75
3: Gate SS-Mini Type Package (3-pin)
1.6±0.15
1.6±0.1 1.0±0.1
0.75±0.15
0.45±0.1
0.5
0.3
0 to 0.1
0.5
0.8±0.1 0.40.4
0.2
+0.1 –0.05
0.15
+0.1 –0.05
1
2
3
0.2±0.1
S
10 to 20
2BS