2SK2569
器件资料摘要：
2SK2569
Silicon N-Channel MOS FET
ADE-208-384
1st. Edition
Application
Low frequency power switching
Features
• Low on-resistance.
• R
DS(on)
= 2.6 max. (at V
GS
= 4 V, I
D
= 100mA)
• 2.5V gate drive device.
• Small package (MPAK).
Outline
MPAK
1. Source
2. Gate
3. Drain
S
D
G
2
1
3
Silicon N-Channel MOS FET
ADE-208-384
1st. Edition
Application
Low frequency power switching
Features
• Low on-resistance.
• R
DS(on)
= 2.6 max. (at V
GS
= 4 V, I
D
= 100mA)
• 2.5V gate drive device.
• Small package (MPAK).
Outline
MPAK
1. Source
2. Gate
3. Drain
S
D
G
2
1
3