Unit
µ A
µ A
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
˚C/W
˚C/W
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
T
C
= 25˚C
dissipation
Ta= 25˚C
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Unit
V
V
A
A
mJ
W
˚C
˚C
Power F-MOS FETs 2SK2538
2SK2538
Silicon N-Channel Power F-MOS
n Features
l Avalanche energy capability guaranteed
l High-speed switching
l No secondary breakdown
n Applications
l High-speed switching (switching mode regulator)
l For high-frequency power amplification
n Absolute Maximum Ratings (Tc = 25˚C)
n Electrical Characteristics (Tc = 25˚C)
Condition
V
DS
= 200V, V
GS
= 0
V
GS
=±30V, V
DS
= 0
I
D
=1mA, V
GS
= 0
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
=1A
V
DS
= 25V, I
D
=1A
I
DR
= 2A, V
GS
= 0
V
DS
=10V, V
GS
= 0, f=1MHz
V
DD
= 200V, I
D
= 2A
V
GS
=10V, R
L
=100Ω
Min
250
1
0.5
Typ
1.2
1
220
60
20
10
20
45
90
Max
100
±1
5
2
–1.6
4.17
62.5
Unit : mm
1 : Gate
2 : Drain
3 : Source
TO-220 Full Pack Package (a)
Rating
250
±30
±2
±4
10
30
2
150
–55 to +150
* L= 5mH, I
L
= 2A, V
DD
= 30V, 1 pulse
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
-0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
ø3.1– 0.1