2SK2529
器件描述：Silicon N-Channel MOS FET
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：51.33KB，共10页
Sponsor by e络盟器件资料摘要：
2SK2529
Silicon N-Channel MOS FET
ADE-208-356F
7th. Edition
Application
High speed power switching
Features
• Low on-resistance
• R
DS(on)
= 7 mW typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
TO-220CFM
1. Gate
2. Drain
3. Source
D
G
S
Silicon N-Channel MOS FET
ADE-208-356F
7th. Edition
Application
High speed power switching
Features
• Low on-resistance
• R
DS(on)
= 7 mW typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
TO-220CFM
1. Gate
2. Drain
3. Source
D
G
S