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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2SK2525-01

器件描述:N-channel MOS-FET
器件厂商:FUJI [Fuji Electric]
文件大小:193.09KB,共2页
Sponsor by e络盟
器件资料摘要:
2SK2525-01 N-channel MOS-FET
FAP-II Series 450V 1Ω 9A 80W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 450 V
Drain-Gate-Voltage (R GS =20K Ω) V DGR 450 V
Continous Drain Current I D 9 A
Pulsed Drain Current I D(puls) 36 A
Gate-Source-Voltage V GS ±30 V
Max. Power Dissipation P D 80 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 450 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 2,5 3,0 3,5 V
Zero Gate Voltage Drain Current I DSS V DS =450V T ch =25°C 500 µA
V GS =0V T ch =125°C 1,0 mA
Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =4,5A V GS =10V 0,87 1,0 Ω
Forward Transconductance g fs I D =4,5A V DS =25V 3,0 6,6 S
Input Capacitance C iss V DS =25V 1150 1700 pF
Output Capacitance C oss V GS =0V 130 200 pF
Reverse Transfer Capacitance C rss f=1MHz 50 75 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =300V 20 30 ns
t r I D =10A 50 75 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 60 90 ns
t f R GS =10 Ω 35 55 ns
Avalanche Capability I AV L = 100µH T ch =25°C 9,0 A
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,1 1,65 V
Reverse Recovery Time t rr I F =I DR V GS =0V 550 ns
Reverse Recovery Charge Q rr -dI F /d t =100A/µs T ch =25°C 3,9 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 35 °C/W
R th(ch-c) channel to case 1,56 °C/W