MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2515 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super Low On-Resistance
RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A)
RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3 400 pF TYP.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID (DC) ±50 A
Drain Current (pulse)* ID (pulse) ±200 A
Total Power Dissipation (Tc = 25 ˚C) PT1 150 W
Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
2SK2515
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10301EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
© 1995
DATA SHEET
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX. 3.2±0.2
2.8±0.10.6±0.12.2±0.2
5.45 5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19 MIN.
20.0±0.2
3.0±0.2
4.5±0.2
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
The diode connected between the gate and source of the transis-
tor serves as a protector against ESD. When this device is
actually used, an additional protection circuit is externally re-
quired if a voltage exceeding the rated voltage may be applied
to this device.