MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 900 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 900 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±4.0 A
Drain Current (pulse)* ID(pulse) ±12 A
Total Power Dissipation (Tc = 25 ˚C) PT1 70 W
Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 4.0 A
Single Avalanche Energy** EAS 65.9 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2481
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
Document No. D10273EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995
DATA SHEET
10.6 MAX.
10.03.0 ± 0.3
3.6 ± 0.2
5.9 MIN.
15.5 MAX.
6.0 MAX.
12.7 MIN.
1.3 ± 0.2
0.75 ± 0.1
2.542.54
4.8 MAX.
1.3 ± 0.2
0.5 ± 0.2
2.8 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
4
123
Body
Diode
Source
Drain
Gate