MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
2SK2498 is N-Channel MOS Field Effect Transistor designed for
high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS (on)1 ≤ 9 mΩ (VGS = 10 V, ID = 25 A)
RDS (on)2 ≤ 14 mΩ (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3400 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
• Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±50 A
Drain Current (pulse)* ID(pulse) ±200 A
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 50 A
Single Avalanche Energy** EAS 250 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2498
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10044EJ1V0DS00 (1st edition)
Date Published July 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
© 1995
DATA SHEET
10.0±0.3 4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.11.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
123
3±0.1
4±0.2
15.0±0.3
12.0±0.2
13.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
Gate Protection
Diode