Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6475
2SK2464
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-2175 No.6475–1/3
6.2
7.8
8.2
0.20.4
4.2
1.0 1.0
5.08
2.542.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1 2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2128
[2SK2464]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Enables simplified fabrication, high-density mound-
ing, and miniaturization in end products due to the
surface mountable package.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Tc=25˚C
Continued on next page.
PW£ 10m s, duty cycle£ 1%
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD
03V
egatloVecruoS-ot-etaGV
SSG
02±V
)CD(tnerruCniarDI
D
54A
)esluP(tnerruCniar
PD
081A
noitapissiDrewoPelbawollAP
D
05W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB(
I
D
V,Am1=
SG
0=03V
tnerruCniarDegatloVetaGoreZI
SSD
V
SD
V,V03=
SG
0 01Aµ
tnerruCegakaeLecruoS-ot-etaGI
SSG
V
SG
V,V02±=
SD
0 01±An
egatloVffotuCV
)ffo(SG
V
SD
I,V01=
D
Am1=24V
ecnattimdArefsnarTdrawroF|sfy|V
SD
I,V01=
D
A22 203S
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
SD
)no(I
D
V,A22=
SG
V01=5.821mW
ecnaticapaCtupnI
1ssiCV
SD
zHM1=f,V0=05730034Fp
2ssiCV
SD
zHM1=f,V01 072Fp
ecnaticapaCtuptuOssoCV
SD
zHM1=f,V01 03 p
ecnaticapaCrefsnarTesreveRssrCV
SD
zHM1=f,V01 54Fp