MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±10 A
Drain Current (pulse)* ID(pulse) ±40 A
Total Power Dissipation (TA = 25 ˚C) PT 1.8 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 10 A
Single Avalanche Energy** EAS 10 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2413
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
© 1994
DATA SHEET
Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan
4.5 ±0.2
13.0 ±0.2
1. Gate
2. Drain
3. Source
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
8.0 ±0.2
123
1.4 ±0.2
0.5 ±0.1 0.5 ±0.10.5 ±0.1
1.4 ±0.2
2.5 ±0.2
MP-10 (ISOLATED TO-220)
PACKAGE DIMENSIONS
(in millimeter)