2SK2421
器件描述:MOSFET
文件大小:33.16KB,共1页
Sponsor by e络盟
器件资料摘要:
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 100µA, VGS = 0VV
VGSS ±20 IGSS ±100 nA VGS = ±20VV
ID ±40 IDSS 100 µAVDS = 60V, VGS = 0VA
ID (pulse) ±160
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mAA
PD 40 (Tc = 25ºC) Re (yfs) 18 25 S VDS = 10V, ID = 20AW
EAS 60 RDS (on) 17.5 20 mΩ VGS = 10V, ID = 20AmJ
Tch 150
Ciss 2400 pF
VDS = 25V, f = 1.0MHz,
VGS = 0V
ºC
IAS 40 A
Tstg –55 to +150
Coss 950 pF
ºCton 400 ns
toff 195 ns
Symbol Unit Conditions
Ratings
typ maxmin
28
*
2
*
1
045
40
30
20
0
V 10VGS =
0
0
10 20 30
10
20
30
–50
0
0 50 100 150
10
20
30
40
4
10
51020
0
30
40
V 10VDS =
25ºC
125ºC
0.1 0.5 1 5
0.5
1
50
0
100
10 20 30 40 50
500
1000
7000
V 0VGS
=f 1MHz
=
Ciss
Coss
Crss
0
10
20
30
40
0 50 100 150
0
0 0.5 1.0 1.2
20
30
40
V 0VGS =
10V
0246
0
1
2
I 40AD =
I 20AD =
V 10VGS =
I 20AD =
T 55ºCC = –
With infinite heatsink
Without heatsink
10
V 4.5VGS =
5V
5.5V
10V
321
20
40
10
5
10 50
V 10VDS =
25ºC
125ºC
T 55ºCC = –
5000
5V
10
2SK2421
External dimensions 1 ...... FM20
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 20V, L = 50µH, IL = 40A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 20A, VDD 30V,
RL = 1.5Ω, VGS = 10V,
See Figure 2 on Page 5.
R
DS
(ON)
(m
Ω
) R
DS
(ON)
(m
Ω
)
Re
(yfs)
(S)
Capacitance (pF)
Ta (ºC)
V
DS
(V)
VDS — ID Characteristics
ID — Re (yfs) Characteristics
VDS — Capacitance Characteristics VSD — IDR Characteristics Ta — PD Characteristics
VGS — VDS Characteristics TC — RDS (ON) Characteristics
VGS — ID Characteristics ID — RDS (ON) Characteristics
VDS (V) VSD (V)
I
DR
(A)
P
D
(W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
I
D
(A)
I
D
(A)