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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
•Low On-Resistance
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)
•Low Ciss Ciss = 570 pF TYP.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±8.0 A
Drain Current (pulse)* ID(pulse) ±32 A
Total Power Dissipation (Tc = 25 ˚C) PT1 20 W
Total Power Dissipation (Ta = 25 ˚C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150°C
Single Avalanche Current** IAS 8.0 A
Single Avalanche Energy** EAS 6.4 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
Document No. D13207EJ1V1DS00 (1st edition)
(Previous No. TC-2496)
Date Published December 1997 N CP(K)
Printed in Japan
2SK2415, 2SK2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
The information in this document is subject to change without notice.
1994
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ± 0.2
TO-251 (MP-3)
5.0 ± 0.2
2.3 ± 0.2
0.5 ± 0.1
0.6 ± 0.1
0.6 ± 0.1
1.3 MAX.
1.6 ± 0.2
13
5.5 ± 0.2
7.0
MAX. 13.7
MIN.
2.32.3
0.75
4
1.5
+
0.2
–
0.1
2
6.5 ± 0.2
5.0 ± 0.2
2.3 ± 0.2
0.5 ± 0.1
4.3
MAX.
1.3 MAX.
2.32.3
123
4
1.5
+
0.2
–

0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0 MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
5.5 ± 0.2
10.0
MAX.
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
TO-252 (MP-3Z)