MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2409 is N-Channel MOS Field Effect Transistor de-
signed for solenoid, motor, and lamp driver.
FEATURES
• Low On-Resistance
RDS(on) ≤ 27 mΩ (VGS = 10 V, ID = 20 A)
RDS(on) ≤ 40 mΩ (VGS = 4 V, ID = 20 A)
• Low Ciss Ciss = 2040 pF TYP.
• Built-in Gate Protection Diode
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Device”
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±40 A
Drain Current (pulse) ID(pulse)* ±160 A
Total Power Dissipation (Ta = 25 ˚C) PT1 2.0 W
Total Power Dissipation (Tc = 25 ˚C) PT2 35 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current IAS** 40 A
Single Avalanche Energy EAS** 160 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Document No. TC-2489
(O. D. No. TC-8028)
Date Published September 1994 P
Printed in Japan
2SK2409
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
0.7 ±0.1 1.3 ±0.2
2.54 2.54
1.5 ±0.2
4 ±0.2
13.5
MIN.
15.0 ±0.3
3 ±0.1
12.0 ±0.2
10.0 ±0.3
3.2 ±0.2
123
1.
2.
3.
Gate
Drain
Source
4.5 ±0.2
2.7 ±0.2
0.65 ±0.1
2.5 ±0.1
MP-45F (ISOLATED TO-220)
Drain
Body
Diode
Gate
Gate Protection
Diode
Source
© 1994
DATA SHEET
The information in this document is subject to change without notice.