2SK2373
Silicon N-Channel MOS FET
ADE-208-268
1st. Edition
Application
Low frequency power switching
Features
• Low on-resistance
• Small package
• Low drive current
• 4 V gate drive device can be driven from 5 V source.
• Suitable for low signal load switch
Outline
MPAK
1. Source
2. Gate
3. Drain
S
D
G
2
1
3