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Power F-MOS FETs
unit: mm
2SK2340
Silicon N-Channel Power F-MOS FET
n Features
l Avalanche energy capacity guaranteed
l High-speed switching
l Low ON-resistance
l No secondary breakdown
n Applications
l Contactless relay
l Diving circuit for a solenoid
l Driving circuit for a motor
l Control equipment
l Switching power supply
1: Gate
2: Drain
3: Source
TO-220E Package
n Electrical Characteristics (T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 720V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
DD
= 200V, I
D
= 3A
V
GS
= 10V, R
L
= 66.6W
min
900
2
1.5
typ
2
3.5
1400
140
60
30
60
60
170
max
100
±1
5
2.8
- 1.6
2.5
62.5
Unit
m A
m A
V
V
W
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
n Absolute Maximum Ratings (T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
900
±30
±5
±10
45
50
2
150
- 55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 3.6mH, I
L
= 5A, 1 pulse
9.9±0.3
231
4.6±0.2
2.9±0.2
2.6±0.1
2.54±0.2
0.75±0.1
1.2±0.15
5.08±0.4
15.0±0.3
13.7
+0.5 –0.2
f 3.2±0.1
3.0±0.2
8.0±0.2
4.1±0.2
Solder Dip
1.45±0.15 0.7±0.1
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