MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
• Low On-Resistance
2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A)
2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SK2359/2SK2360) VDSS 450/500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±7.0 A
Drain Current (pulse)* ID(pulse) ±28 A
Total Power Dissipation (Tc = 25 ˚C) PT1 75 W
Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 7.0 A
Single Avalanche Energy** EAS 17 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2359/2SK2360
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
10.0
3.0 ± 0.3
3.6 ± 0.2
5.9 MIN.
15.5 MAX.
6.0 MAX.
12.7 MIN.
1.3 ± 0.2
0.75 ± 0.1
2.542.54
4.8 MAX.
1.3 ± 0.2
0.5 ± 0.2
2.8 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
(10.0)
4.8 MAX.
1.3 ± 0.2
0.5 ± 0.2
(0.5R)
(0.8R)
4
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
123
(2.54) (2.54)
1.4 ± 0.2
8.5 ± 0.2
1.1 ± 0.4 3.0 ± 0.5
2.8 ± 0.2
1.5 MAX.
1.0 ± 0.5
4
1.0 ± 0.3
MP-25Z (SURFACE MOUNT TYPE)
Body
Diode
Source
Drain
Gate
Document No. TC-2501
(O. D. No. TC-8060)
Date Published February 1995 P
Printed in Japan
MP-25 (TO220)
© 1995
DATA SHEET