Power F-MOS FETs 2SK2339
2SK2339
Silicon N-Channel Power F-MOS
n Features
l Avalanche energy capability guaranteed
l Low ON-resistance
l No secondary breakdown
l Low-voltage drive
n Applications
l Non-contact relay
l Solenoid drive
l Motor drive
l Control equipment
l Switching mode regulator
n Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
T
C
= 25˚C
dissipation
Ta= 25˚C
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Rating
80±10
±15
±10
±20
62.5
30
1.3
150
–55 to +150
Unit
V
V
A
A
mJ
W
˚C
˚C
n Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
1
R
DS(on)
2
| Y
fs
|
V
DSF
t
rr
Q
rr
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Condition
V
DS
= 70V, V
GS
= 0
V
DS
= 0, V
GS
=15V
I
D
=1mA, V
GS
= 0
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
= 5A
V
GS
= 4V, I
D
= 5A
V
DS
=10V, I
D
= 5A
I
DR
=10A, V
GS
= 0
L=230µ H, V
DD
= 30V, V
GS
= 0
I
DR
=10A, di/dt= 80A/µ s
V
DS
=10V, V
GS
= 0, f= 1MHz
V
DD
= 30V, I
D
= 5A
V
GS
=10V, R
L
= 6Ω
Min
70
1
3
Typ
150
230
5.5
0.55
2.2
85
250
20
0.5
0.9
1.9
Max
10
±10
90
2.5
230
370
–1.8
4.2
96
Unit
µA
µA
V
V
mΩ
mΩ
S
V
µs
µs
pF
pF
pF
µs
µs
µs
˚C/W
˚C/W
Unit : mm
1 : Gate
2 : Collector
3 : Emitter
N Type Package
* L= 5mH, I
L
= 5A, 1 pulse
n Equivalent Circuit
8.5– 0.2
6.0– 0.5
10.0
–
0.3
10.5min.
2.0
1.5
–
0.1
1.5max.
0.8– 0.1
5.08– 0.5
2.54– 0.3
1.1max.
0.5max.
1.0– 0.1
3.4– 0.3
213
G
S
D