© 1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)
2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2357/2358) VDSS 450/500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±6.0 A
Drain Current (pulse)* ID(pulse) ±24 A
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (Ta = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current** IAS 6.0 A
Single Avalanche Energy** EAS 17 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
Drain
Body
Diode
Gate
Source
10.0 ±0.3
0.7 ±0.1
2.7 ±0.2
4.5 ±0.2
15.0 ±0.3
3.2 ±0.2
2.5 ±0.1
0.65 ±0.1
1.3 ±0.2
1.5 ±0.2
2.542.54
3 ±0.1
12.0 ±0.2
13.5 MIN.
4 ±0.2
1. Gate
2. Drain
3. Source
123
PACKAGE DIMENSIONS
(in millimeters)
MP-45F (ISOLATED TO-220)