2SK2349
Ordering number : EN5315A
High-Voltage, High-Speed
Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5315-1/4
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2349]
SANYO: TO-3JML
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
1500 V
Gate-to-Source Voltage V
GSS
±30 V
Drain Current (DC) I
D
10 A
Drain Current (pulse) I
DP
PW≤10µs, duty cycle≤1% 20 A
Allowable Power Dissipation P
D
4.6 W
Tc=25°C 160 W
Channel Temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
D-S Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 1500 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=1500V, V
GS
=0 1.0 mA
Gate-to Source Leak Current I
GSS
V
GS
=±30V, V
DS
=0 ±100 nA
Cutoff Voltage V
GS(off)
V
DS
=10V, I
D
=1mA 1.5 3.5 V
Forward Transfer Admittance |y
fs
|V
DS
=20V, I
D
=5A 2.0 4.0 S
Static Drain-to-Source R
DS(on)
I
D
=5A, V
GS
=10V 1.5 2.5 Ω
ON-State Resistance
Input Capacitance Ciss V
DS
=20V, f=1MHz 2900 pF
Output Capacitance Coss V
DS
=20V, f=1MHz 400 pF
Reverse Transfer Capacitance Crss V
DS
=20V, f=1MHz 200 pF
Continued on next page.
Features
• Low ON resistance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).