Silicon MOS FETs (Small Signal)
1
2SK2211
Silicon N-Channel MOS FET
For switching
n Features
• Low ON-resistance R
DS(ON)
• High-speed switching
• Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
n Absolute Maximum Ratings T
a
= 25 C
1: Gate
2: Drain
3: Source
Mini-Power Type Package (3-pin)
Parameter Symbol Conditions Min Typ Max Unit
Drain to Source cut-off current I
DSS
V
DS
= 25 V, V
GS
= 010m A
Gate to Source leakage current I
GSS
V
GS
= – 15 V, V
DS
= 0 – 10 m A
Drain to Source breakdown voltage V
DSS
I
D
= 0.1 mA, V
GS
= 030 V
Gate to Source voltage V
GSS
I
GS
= 0.1 mA, V
DS
= 0 – 20 V
Gate threshold voltage V
th
V
DS
= 5 V, I
D
= 1 mA 0.8 2 V
Drain to Source ON-resistance
*
R
DS(ON)1
V
GS
= 4 V, I
D
= 0.5 A 0.48 0.75 W
R
DS(ON)2
V
GS
= 10 V, I
D
= 0.5 A 0.35 0.6 W
Forward transfer admittance ‰ Yfs‰ V
DS
= 10 V, I
D
= 0.5 A 0.5 S
Input capacitance (Common Source) C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz 87 pF
Output capacitance (Common Source) C
oss
69 pF
Reverse transfer capacitance (Common Source) C
rss
23 pF
Turn-on time t
ON
V
GS
= 10 V, I
D
= 0.5 A, V
DD
= 10 V 12 ns
Fall time t
f
R
L
= 10 W 160 ns
Turn-off time (delay time) t
OFF
60 ns
n Electrical Characteristics T
a
= 25 C
Unit : mm
Marking Symbol: 2M
Note) *: Pulse measurement
Parameter Symbol Ratings Unit
Drain to Source voltage V
DS
30 V
Gate to Source voltage V
GSO
– 20 V
Drain current I
D
– 1A
Max drain current I
PD
– 2A
Allowable power dissipation
*
P
D
1W
Channel temperature P
ch
150 C
Storage temperature T
stg
- 55 to +150 C
Note) * PC board: Copper foil of the drain portion should have a area of
1 cm
2
or more and the board thickness should be 1.7 mm.
4.5±0.1
2.6
±0.1
2.5
±0.1
0.4 max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0±0.15
1.5±0.1
0.4±0.08
0.5±0.08
1.5±0.1
0.4±0.04
1.6±0.2
45˚
marking
321
Internal Connection
D
S
G