2SK2208
器件描述:MOSFET
文件大小:34.83KB,共1页
Sponsor by e络盟
器件资料摘要:
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 900 V(BR) DSS 900 V ID = 100µA, VGS = 0VV
VGSS ±30 IGSS ±100 nA VGS = ±30VV
ID ±5IDSS 100 µAVDS = 900V, VGS = 0VA
ID (pulse) ±20
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 1mAA
PD 75 (Tc = 25ºC) Re (yfs) 2.0 3.0
3.0
SVDS = 20V, ID = 2.5AW
EAS 400 RDS (on) 2.5 3.0 Ω VGS = 10V, ID = 2.5AmJ
Tch 150
Ciss 1000 pF
VDS = 10V, f = 1.0MHz,
VGS = 0V
ºC
IAS 5 A
Tstg –55 to +150
Coss 190 pF
Crss 90 pFºC
ton 60 ns
toff 155 ns
Symbol Unit Conditions
Ratings
typ maxmin
25
*
2
*
1
01020
3
2
1
0
V 10VGS =
6V
5.5V
5V
4.5V
4V
155
4
5
V 10VGS =
0
0
123
1
2
4
3
45
–50
0
0 50 100 150
2
4
6
8
10
V 10VGS =
I 2.5AD =
0
1
246810
0
2
3
V 20VDS =
25ºC
125ºC
4
5
0.05
0.3
0.1 0.5 1 5
0.5
1
3
5
25ºC
125ºC
0
10
10 20 30 40 50
50
100
500
1000
5000
V 0VGS
=f 1MHz
=
Ciss
Coss
Crss
3
0.03
5 10 50 100 500 1000
0.1
0.5
1
5
10
50
ID (pulse) max
DI max 1m
s
100
µ
s
D
C
O
PE
R
A
TIO
N
10ms (1shot)
R
DS (ON)
LIM
ITED
0 0.2 0.4 0.6 0.8 1.0
0
1
2
3
4
5
0
10
20
30
40
50
60
70
75
0 50 100 150
V 0VGS =
5V,10V
With infinite heatsink
Without heatsink
51020
0
5
10
15
20
I 5AD =
I 2.5AD =
T 55ºCC = –
T 55ºCC = –
2SK2208
External dimensions 2 ...... FM100
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 50V, L = 30mH, IL = 5A, unclamped, RG = 50Ω,
See Figure 1 on Page 5.
ID = 2.5A, VDD 250V,
RL = 100Ω, VGS = 10V,
See Figure 2 on Page 5.
(Tc=25ºC)
R
DS
(ON)
(
Ω
) R
DS
(ON)
(
Ω
)
Re
(yfs)
(S)
Capacitance (pF)
Ta (ºC)
V
DS
(V)
VDS — ID Characteristics
ID — Re (yfs) Characteristics
VDS — Capacitance Characteristics VSD — IDR Characteristics Ta — PD CharacteristicsSafe Operating Area
VGS — VDS Characteristics TC — RDS (ON) Characteristics
VGS — ID Characteristics ID — RDS (ON) Characteristics
VDS (V)VDS (V) VSD (V)
I
DR
(A)
I
D
(A)
P
D
(W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
I
D
(A)
I
D
(A)