2SK2203
器件描述：Silicon N-Channel MOS FET
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：50.16KB，共10页
Sponsor by e络盟器件资料摘要：
2SK2203
Silicon N-Channel MOS FET
ADE-208-139
1st. Edition
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
1. Gate
2. Drain
3. Source
D
G
S
1
2
3
Silicon N-Channel MOS FET
ADE-208-139
1st. Edition
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
1. Gate
2. Drain
3. Source
D
G
S
1
2
3