© 1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11234EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
The 2SK2158 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2158 is suitable for use in low-voltage
portable systems such as headphone stereo sets and camcorders.
FEATURES
• Capable of drive gate with 1.5 V
• Because of high input impedance, there is no need to
consider driving current.
• Bias resistance can be omitted, enabling reduction in total
number of parts.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT
Drain to Source Voltage VDSS VGS = 0 50 V
Gate to Source Voltage VGSS VDS = 0 ±7.0 V
Drain Current (DC) ID(DC) ±0.1 A
Drain Current (pulse) ID(pulse) PW ≤ 10 ms, ±0.2 A
Duty Cycle ≤ 50 %
Total Power Dissipation PT 200 mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
2.8 – 0.2
1.5
3
2
0.95
1
Marking
Marking: G23
3
1
2
Gate protection
diode
Internal
diode
EQUIVALENT CIRCUIT
0.65
+0.1
–0.15
0.4
+0.1 –0.05
0.4
+0.1 –0.05
0.16
+0.1 –0.06
0 to 0.1
2.9
–
0.2
0.95
0.3
1.1 to 1.4
PIN CONNECTION
1. Source (S)
2. Gate (G)
3. Drain (D)
PACKAGE DIMENSIONS
(in millimeters)