2SK2166-01R
N-channel MOS-FET
FAP-IIIA Series 60V 0,03Ω 40A 80W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
- Including G-S Zener-Diode
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC Converters
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
60 V
Drain-Gate-Voltage (R
GS
=20K Ω) V DGR 60 V
Continous Drain Current I
D
40 A
Pulsed Drain Current I
D(puls)
160 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
80 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 60 V
Gate Threshhold Voltage V
GS(th)
I
D
=1mA V
DS=
V
GS
1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V T
ch
=25°C 500 µA
V
GS
=0V T
ch
=125°C 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±16V V
DS
=0V 10 µA
Drain Source On-State Resistance R
DS(on)
I
D
=20A V
GS
=4V 0,030 0,050 Ω
I
D
=20A V
GS
=10V 0,20 0,030 Ω
Forward Transconductance g
fs
I
D
=20A V
DS
=25V 13 25 S
Input Capacitance C
iss
V
DS
=25V 1600 2400 pF
Output Capacitance C
oss
V
GS
=0V 580 870 pF
Reverse Transfer Capacitance C
rss
f=1MHz 320 480 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=30V 15 23 ns
t
r
I
D
=40A 90 140 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 300 450 ns
t
f R GS =25 Ω
190 290 ns
Avalanche Capability I
AV
L=100µH T
ch
=25°C 40 A
Continous Reverse Drain Current I
DR
40 A
Pulsed Reverse Drain Current I
DRM
160 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 1,4 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 80 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 0,17 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 30 °C/W
R
th(ch-c)
channel to case 1,56 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56