© 1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2159
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11235EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
The 2SK2159 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2159 is suitable for driving actuators of
low-voltage portable systems such as headphone stereo sets
and camcorders.
FEATURES
• Capable of drive gate with 1.5 V
• Small RDS(on)
RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A
RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT
Drain to Source Voltage VDSS VGS = 0 60 V
Gate to Source Voltage VGSS VDS = 0 ±14 V
Drain Current (DC) ID(DC) ±2.0 A
Drain Current (pulse) ID(pulse) PW ≤ 10 ms, ±4.0 A
Duty Cycle ≤ 50 %
Total Power Dissipation PT Mounted on 16 cm
2
× 0.7 mm ceramic substrate. 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
4.5 – 0.1
1.6 – 0.2
1
2
3
2.5
–
0.1
4.0
–
0.25
3.0
1.5
0.42 – 0.06
0.47
– 0.06
0.8 MIN.
0.42
– 0.06
1.5 – 0.1
0.41
–0.05
+0.03
2
3
Gate protection
diode
Internal diode
1
PACKAGE DIMENSIONS
(in millimeters)
EQUIVALENT CIRCUIT
PIN CONNECTION
1. Source (S)
2. Drain (D)
3. Gate (G)
Marking: NW