2SK2148-01
器件资料摘要：
2SK2148-01 N-channel MOS-FET
FAP-IIA Series 600V 0,75Ω 12A 80W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 600 V
Drain-Gate-Voltage (R GS =20K Ω) V DGR 600 V
Continous Drain Current I D 12 A
Pulsed Drain Current I D(puls) 48 A
Gate-Source-Voltage V GS ±30 V
Max. Power Dissipation P D 80 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 600 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 2,5 3,0 3,5 V
Zero Gate Voltage Drain Current I DSS V DS =600V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =6A V GS =10V 0,55 0,75 Ω
Forward Transconductance g fs I D =6A V DS =25V 6 12 S
Input Capacitance C iss V DS =25V 2500 3800 pF
Output Capacitance C oss V GS =0V 220 330 pF
Reverse Transfer Capacitance C rss f=1MHz 50 75 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =300V 30 45 ns
t r I D =12A 60 90 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 140 210 ns
t f R GS =10 Ω 80 120 ns
Avalanche Capability I AV L = 100µH T ch =25°C 12 A
Continous Reverse Drain Current I DR 12 A
Pulsed Reverse Drain Current I DRM 48 A
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,05 1,58 V
Reverse Recovery Time t rr I F =I DR V GS =0V 450 ns
Reverse Recovery Charge Q rr -dI F /d t =100A/µs T ch =25°C 3 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 30 °C/W
R th(ch-c) channel to case 1,56 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
FAP-IIA Series 600V 0,75Ω 12A 80W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V GS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 600 V
Drain-Gate-Voltage (R GS =20K Ω) V DGR 600 V
Continous Drain Current I D 12 A
Pulsed Drain Current I D(puls) 48 A
Gate-Source-Voltage V GS ±30 V
Max. Power Dissipation P D 80 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 600 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 2,5 3,0 3,5 V
Zero Gate Voltage Drain Current I DSS V DS =600V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =6A V GS =10V 0,55 0,75 Ω
Forward Transconductance g fs I D =6A V DS =25V 6 12 S
Input Capacitance C iss V DS =25V 2500 3800 pF
Output Capacitance C oss V GS =0V 220 330 pF
Reverse Transfer Capacitance C rss f=1MHz 50 75 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =300V 30 45 ns
t r I D =12A 60 90 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 140 210 ns
t f R GS =10 Ω 80 120 ns
Avalanche Capability I AV L = 100µH T ch =25°C 12 A
Continous Reverse Drain Current I DR 12 A
Pulsed Reverse Drain Current I DRM 48 A
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,05 1,58 V
Reverse Recovery Time t rr I F =I DR V GS =0V 450 ns
Reverse Recovery Charge Q rr -dI F /d t =100A/µs T ch =25°C 3 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 30 °C/W
R th(ch-c) channel to case 1,56 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56