1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
1.5 ± 0.1
0.41
+0.03
–0.05
0.8 MIN.
0.42
±0.06
1.5
3.0
0.47
±0.06
0.42
±0.06
2.5 ± 0.1
4.0 ± 0.25
4.5 ± 0.1
1.6 ± 0.2
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NS
The 2SK2109 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuator, such as motors
and DC/DC converters.
FEATURES
• Low ON resistance
RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
• High switching speed
ton + toff < 100 ns
• Low parasitic capacitance
Document No. D11229EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 60 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±0.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±1.0 A
Duty cycle ≤ 50 %
Total Power Dissipation PT 16 cm
2
× 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C