2SK2098-01MR
N-channel MOS-FET
FAP-III Series 150V 0,08Ω 20A 50W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
150 V
Drain-Gate-Voltage (R
GS
=20K Ω) V DGR 150 V
Continous Drain Current I
D
20 A
Pulsed Drain Current I
D(puls)
80 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
50 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 150 V
Gate Threshhold Voltage V
GS(th)
I
D
=1mA V
DS=
V
GS
1,0 1,5 2,5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=150V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=10A V
GS
=4V 0,065 0,1 Ω
I
D
=10A V
GS
=10V 0,055 0,08 Ω
Forward Transconductance g
fs
I
D
=10A V
DS
=25V 10 20 S
Input Capacitance C
iss
V
DS
=25V 2300 3450 pF
Output Capacitance C
oss
V
GS
=0V 330 500 pF
Reverse Transfer Capacitance C
rss
f=1MHz 150 230 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=30V 15 25 ns
t
r
I
D
=20A 20 30 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 450 700 ns
t
f R GS =25 Ω
100 150 ns
Avalanche Capability I
AV
L = 100µH T
ch
=25°C 20 A
Continous Reverse Drain Current I
DR
20 A
Pulsed Reverse Drain Current I
DRM
80 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 1,0 1,50 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 125 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 0,6 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 62,5 °C/W
R
th(ch-c)
channel to case 2,5 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56