1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2070
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
7.0 MAX. 1.2
2.0
9.0 MAX.
12.0 MIN.
0.55 ±0.1
0.8 ±0.1
0.6 ±0.1
3.0 MAX.
0.6 ±0.1
0.6 ±0.1
1.7 1.7
1.5
4.0 MAX.
G D S
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
The 2SK2070 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A
RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A
Document No. D11227EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 100 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±1.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±3.0 A
Duty cycle ≤ 50 %
Total Power Dissipation PT 1.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C