1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2054
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
2.0 ±0.2
5.7 ±0.1
3.65 ±0.1
1.0
0.5 ±0.1
0.55
2.1
4.2
0.5 ±0.1
0.85
±0.1
SDG 5.4 ±0.25
1.5 ±0.1
0.4 ±0.05
Marking: NA2
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
The 2SK2054 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
RDS(on) = 0.25 Ω MAX. @VGS = 4 V, ID = 1.5 A
RDS(on) = 0.20 Ω MAX. @VGS = 10 V, ID = 1.5 A
Document No. D11225EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 60 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±3.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±6.0 A
Duty cycle ≤ 50 %
Total Power Dissipation PT 7.5 cm
2
× 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C