2SK2048-L
器件描述:N-channel MOS-FET
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器件资料摘要:
2SK2048-L,S
N-channel MOS-FET
F-III Series 30V 0,022Ω35A 60W
>Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
>Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
30 V
Drain-Gate-Voltage (R
GS
=20K Ω) V DGR 30 V
Continous Drain Current I
D
35 A
Pulsed Drain Current I
D(puls)
140 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
60 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 30 V
Gate Threshhold Voltage V
GS(th)
I
D
=1m A V
DS=
V
GS
1,0 1,5 2,5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=30V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=17,5A V
GS
=4V 0,025 0,037 Ω
I
D
=17,5A V
GS
=10V 0,016 0,022 Ω
Forward Transconductance g
fs
I
D
=17,5A V
DS
=12V 8 17 S
Input Capacitance C
iss
V
DS
=25V 1750 2630 pF
Output Capacitance C
oss
V
GS
=0V 800 1200 pF
Reverse Transfer Capacitance C
rss
f=1MHz 400 600 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=12V 25 38 ns
t
r
I
D
=35A 100 150 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 300 450 ns
t
f R GS =25 Ω
180 270 ns
Continous Reverse Drain Current I
DR
35 A
Pulsed Reverse Drain Current I
DRM
140 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 1,35 2,0 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 100 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 0,5 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 125 °C/W
R
th(ch-c)
channel to case 2,08 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com