1
Silicon Junction FETs (Small Signal)
unit: mm
2SK198
Silicon N-Channel Junction FET
For low-frequency amplification
n Features
l High mutual conductance g
m
l Low noise type
l Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
ch
T
stg
Ratings
30
- 30
20
10
150
150
- 55 to +150
Unit
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS
*
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= - 30V, V
DS
= 0
V
DS
= 10V, I
D
= 10m A
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 30V, I
D
= 1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
min
0.5
- 0.1
4
max
12
- 100
- 1.5
Unit
mA
nA
V
mS
pF
pF
mV
*
I
DSS
rank classification
Marking Symbol (Example): 1O
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.95
0.95
1.9±0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
typ
13
14
3.5
60
Runk
I
DSS
(mA)
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR