2SK1969-01
N-channel MOS-FET
FAP-IIIA Series 60V 0,017Ω50A 125W
>Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
- Including G-S Zener-Diode
>Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC Converters
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
60 V
Drain-Gate-Voltage (R
GS
=20K Ω) V DGR 60 V
Continous Drain Current I
D
50 A
Pulsed Drain Current I
D(puls)
200 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
125 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 60 V
Gate Threshhold Voltage V
GS(th)
I
D
=1m A V
DS=
V
GS
1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V T
ch
=25°C 500 µA
V
GS
=0V T
ch
=125°C 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±16V V
DS
=0V 10,0 µA
Drain Source On-State Resistance R
DS(on)
I
D
=25A V
GS
=4V 0,019 0,027 Ω
I
D
=25A V
GS
=10V 0,013 0,017 Ω
Forward Transconductance g
fs
I
D
=25A V
DS
=25V 20 40 S
Input Capacitance C
iss
V
DS
=25V 2600 3900 pF
Output Capacitance C
oss
V
GS
=0V 1000 1500 pF
Reverse Transfer Capacitance C
rss
f=1MHz 630 950 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=30V 20 30 ns
t
r
I
D
=50A 210 320 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 520 780 ns
t
f R GS =25 Ω
420 630 ns
Avalanche Capability I
AV
L = 100µH T
ch
=25°C 50 A
Continous Reverse Drain Current I
DR
50 A
Pulsed Reverse Drain Current I
DRM
200 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 1,45 2,18 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 85 120 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 0,16 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 35 °C/W
R
th(ch-c)
channel to case 1,0 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com