© 1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1959
The 2SK1959 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• Gate can be driven by 1.5 V
• Low ON resistance
RDS(on) = 3.2 Ω MAX. @ VGS = 1.5 V, ID = 50 mA
RDS(on) = 0.5 Ω MAX. @ VGS = 4.0 V, ID = 1.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 16 V
Gate to Source Voltage VGSS VDS = 0 ±7.0 V
Drain Current (DC) ID(DC) ±2.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % ±4.0 A
Total Power Dissipation PT 16 cm
2
× 0.7 mm ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. D11222EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 ±0.2
4.5 ±0.1
0.42 ±0.06
0.8 MIN.
1.5
0.47
±0.06
3.0
2.5 ±0.1
4.0 ±0.25
0.41
+0.03
–0.05
1.5 ±0.1
S
D
G
0.42 ±0.06
Marking: NQ
EQUIVALENT CURCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING