2SK1712
器件描述:MOSFET
文件大小:34.28KB,共1页
Sponsor by e络盟
器件资料摘要:
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±10 IGSS ±500 nA VGS = ±10VV
ID ±15 IDSS 250 µAVDS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 1.0 2.0 V VDS = 10V, ID = 250µAA
PD 30 (Tc = 25ºC) Re (yfs) 5.6 8.4 S VDS = 10V, ID = 8.0AW
EAS 6.2
RDS (on)
0.12 0.14 Ω VGS = 4V, ID = 8.0A
0.07 0.1 Ω VGS = 10V, ID = 8.0A
mJ
Tch 150
*
: VDD = 25V, L = 50µH, IL = 12A, unclamped,
See Figure 1 on Page 5.
Ciss 820 pF
VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 8A, VDD = 30V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150
Coss 360 pF
ºC
ton 100 ns
toff 75 ns
Symbol Unit Conditions
Ratings
typ maxmin
23
*
0
16
8
6
0
V 3VGS =
3.5V
4.5V 4V
V 10VGS =
0
0
246
0.04
0.06
0.08
0.10
0.12
0.14
–50
0.03
0 50 100 150
0.07
0.09
0.11
0.13
0.15
0.17
2510
V 10VDS =
25ºC
125ºC
0.03
0.2
0.1 0.5 1 5
0.5
5
10
20
V 10VDS =
25ºC
125ºC
0
30
10 20 30 40 50
50
100
500
1000
3000
V 0VGS
=f 1MHz
=
Ciss
Coss
Crss
0.3
0.5 1 5 10 50 100
0.5
5
10
50
100
ID (pulse) max
DI max
1ms
100
µ
s
DC OPERATION
0
10
20
30
0 50 100 150
0
0 0.2 0.4 0.6 0.8 1.0
2
12
14
V 0VGS =
4V
012345
0
1
2
15A
I 8AD =
I 8AD =
T 55ºCC = –
T 55ºCC = –
LIMITED
With infinite heatsink
Without heatsink
14
12
10
4
2
12345
5V
16
8
6
0
14
12
10
4
2 0.02
8 10121416
4V
1
10 20
0.05
V 10VGS =
4V
4
6
8
10
1.2 1.4
10V
1
2SK1712
External dimensions 1 ...... FM20
±60 (Tch 150ºC)
(Tc=25ºC)
R
DS
(ON)
(
Ω
) R
DS
(ON)
(
Ω
)
Re
(yfs)
(S)
Capacitance (pF)
Ta (ºC)
V
DS
(V)
VDS — ID Characteristics
ID — Re (yfs) Characteristics
VDS — Capacitance Characteristics VSD — IDR Characteristics Ta — PD CharacteristicsSafe Operating Area
VGS — VDS Characteristics TC — RDS (ON) Characteristics
VGS — ID Characteristics ID — RDS (ON) Characteristics
VDS (V)VDS (V) VSD (V)
I
DR
(A)
I
D
(A)
P
D
(W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
I
D
(A)
I
D
(A)
R
DS (ON)