2SK1663-L,S N-channel MOS-FET
F-I Series 800V 4Ω 3A 80W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
> Applications
- Switching Regulators
- UPS
- DC-DC Converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 800 V
Continous Drain Current I D 3 A
Pulsed Drain Current I D(puls) 12 A
Continous Reverse Drain Current I DR 3 A
Gate-Source-Voltage V GS ±20 V
Max. Power Dissipation P D 80 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 800 V
Gate Threshhold Voltage V GS(th) I D =10mA V DS= V GS 2,1 3,0 4,0 V
Zero Gate Voltage Drain Current I DSS V DS =800V T ch =25°C 0,01 0,5 mA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±20V V DS =0V 10 100 nA
Drain Source On-State Resistance R DS(on) I D =1,5A V GS =10V 3 4 Ω
Forward Transconductance g fs I D =1,5A V DS =25V 2 4 S
Input Capacitance C iss V DS =25V 900 1400 pF
Output Capacitance C oss V GS =0V 90 140 pF
Reverse Transfer Capacitance C rss f=1MHz 35 60 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =30V 20 30 ns
t r I D =2,1A 40 60 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =10V 150 250 ns
t f R GS =50 Ω 60 90 ns
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1 1,35 V
Reverse Recovery Time t rr I F =I DR V GS =0V 400 ns
-dI F /d t =100A/µs T ch =25°C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 125 °C/W
R th(ch-c) channel to case 1,56 °C/W
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