TOSHIBA

TOSHIBA CORPORATION

1/6

Discrete Semiconductors

2SK1544

Field Effect Transistor
Silicon N Channel MOS Type (

p

-MOS III.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications

Features

• Low Drain-Source ON Resistance
-R

DS(ON)

= 0.15

W

(Typ.)
• High Forward Transfer Admittance
-

œ

Y

fs

œ

= 21S (Typ.)
• Low Leakage Current
-I

DSS

= 300

m

A (Max.) @ V

DS

= 500V
• Enhancement-Mode
-V
th

= 1.5 ~ 3.5V @ V

DS

= 10V, I

D

= 1mA

This transistor is an electrostatic sensitive device. Please handle with care.

Absolute Maximum Ratings (Ta = 25



C)

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage V

DSS

500 V
Drain-Gate Voltage (R

GS

= 20k

W

)V
DGR

500 V
Gate-Source Voltage V

GSS

–

30 V
Drain Current DC I

D

25 A
Pulse I

DP

100
Drain Power Dissipation
(Tc = 25



C)
P

D

200 W
Channel Temperature T

ch

150



C
Storage Temperature Range T

stg

-55 ~ 150



C

Thermal Characteristics

CHARACTERISTIC SYMBOL MAX. UNIT

Thermal Resistance, Channel to Case R

th(ch-c)

0.625



C/W
Thermal Resistance, Channel to Ambient R

th(ch-a)

35.7



C/W

Unit in mmIndustrial Applications