2SK1508 N-channel MOS-FET
F-III Series 60V 0,035Ω 35A 60W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 60 V
Continous Drain Current I D 35 A
Pulsed Drain Current I D(puls) 140 A
Continous Reverse Drain Current I DR 35 A
Gate-Source-Voltage V GS ±20 V
Max. Power Dissipation P D 60 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
- Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 60 V
Gate Threshhold Voltage V GS(th) I D =1mA V DS= V GS 1,0 1,5 2,5 V
Zero Gate Voltage Drain Current I DSS V DS =60V T ch =25°C 10 500 µA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±20V V DS =0V 10 100 µA
Drain Source On-State Resistance R DS(on) I D =17,5A V GS =4V 0,037 0,056 Ω
I D =17,5A V GS =10V 0,025 0,035 Ω
Forward Transconductance g fs I D =17,5A V DS =25V 10 18 S
Input Capacitance C iss V DS =25V 1800 2700 pF
Output Capacitance C oss V GS =0V 620 930 pF
Reverse Transfer Capacitance C rss f=1MHz 240 360 pF
Turn-On-Time t on ( t on =t d(on) +t r ) t d(on) V CC =30V 6 9 ns
t r I D =10A 60 90 ns
Turn-Off-Time t off (t on =t d(off) +t f ) t d(off) V GS =35V 350 530 ns
t f R GS =25 Ω 150 230 ns
Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,35 2,0 V
Reverse Recovery Time t rr I F =I DR V GS =0V 60 ns
-dI F /d t =100A/µs T ch =25°C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 75 °C/W
R th(ch-c) channel to case 2,08 °C/W
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