2SK1412LS
器件描述：Ultrahigh-Speed Switching Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：36.62KB，共4页
Sponsor by e络盟器件资料摘要：
2SK1412LS
No.4228-1/4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
1500 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
0.1 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 0.2 A
Allowable Power Dissipation P
D
2.0 W
Tc=25°C20
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 1500 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=1200V, V
GS
=0 100 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=±20V, V
DS
=0 ±100 nA
(Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source. Continued on next page.
Marking : K1412
Features
•
Low ON-resistance, low input capacitance.
•
Ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Micaless package facilitating mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN4228B
2SK1412LS
Package Dimensions
unit : mm
2078C
[2SK1412LS]
N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2
No.4228-1/4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
1500 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
0.1 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 0.2 A
Allowable Power Dissipation P
D
2.0 W
Tc=25°C20
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 1500 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=1200V, V
GS
=0 100 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=±20V, V
DS
=0 ±100 nA
(Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source. Continued on next page.
Marking : K1412
Features
•
Low ON-resistance, low input capacitance.
•
Ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Micaless package facilitating mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN4228B
2SK1412LS
Package Dimensions
unit : mm
2078C
[2SK1412LS]
N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2