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©

1991, 2000
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
FEATURES
• Directly driven by ICs having a 3-V power supply.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
• Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V) VDSS 50 V
Gate to Source Voltage (VDS= 0 V) VGSS ±7.0 V
Drain Current (DC) ID(DC) ±100 mA
Drain Current (pulse)
Note
ID(pulse) ±200 mA
Total Power Dissipation PT 250 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
The mark a35 shows major revised points.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK1398 SST
a35