2SK1399
器件描述：N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
器件厂商：NEC [NEC]
文件大小：46.94KB，共8页
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
1991, 2000
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark a35 shows major revised points.
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET which can be
driven by 2.5-V power supply.
The 2SK1399 is driven by low voltage and does not require consideration
of driving current, it is suitable for appliances including VCR cameras and
headphone stereos which need power saving.
FEATURES
• Can be driven by a 3.0-V power source
• Not necessary to consider driving current because of it is high input
impedance
• Possible to reduce the number of parts by omitting the bias resistor
• Can be used complementary with the 2SJ185
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK1399 SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 50 V
Gate to Source Voltage VGSS ±7.0 V
Drain Current (DC) ID(DC) ±100 mA
Drain Current (pulse)
Note
ID(pulse) ±200 mA
Total Power Dissipation PT 200 mW
Channel Temperature Tch 150 °C
Operating Temperature Topt –55 to +80 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50 %
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
PACKAGE DRAWING (Unit : mm)
2.8 ± 0.2
1.5 0.65
0.95
0.3
0.95
2.9 ± 0.2
1.1 to 1.4
0 to 0.1
0.16
+0.1 –0.06
2
1
3
+0.1 –0.05
0.4
+0.1 –0.05
0.4
Marking
+0.1
–0.15
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Marking: G12
Gate
Drain
Electrode
Connection
1.Source
2.Gate
3.Drain
a35
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
1991, 2000
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark a35 shows major revised points.
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET which can be
driven by 2.5-V power supply.
The 2SK1399 is driven by low voltage and does not require consideration
of driving current, it is suitable for appliances including VCR cameras and
headphone stereos which need power saving.
FEATURES
• Can be driven by a 3.0-V power source
• Not necessary to consider driving current because of it is high input
impedance
• Possible to reduce the number of parts by omitting the bias resistor
• Can be used complementary with the 2SJ185
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK1399 SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 50 V
Gate to Source Voltage VGSS ±7.0 V
Drain Current (DC) ID(DC) ±100 mA
Drain Current (pulse)
Note
ID(pulse) ±200 mA
Total Power Dissipation PT 200 mW
Channel Temperature Tch 150 °C
Operating Temperature Topt –55 to +80 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50 %
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
PACKAGE DRAWING (Unit : mm)
2.8 ± 0.2
1.5 0.65
0.95
0.3
0.95
2.9 ± 0.2
1.1 to 1.4
0 to 0.1
0.16
+0.1 –0.06
2
1
3
+0.1 –0.05
0.4
+0.1 –0.05
0.4
Marking
+0.1
–0.15
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Marking: G12
Gate
Drain
Electrode
Connection
1.Source
2.Gate
3.Drain
a35