2SK1280
器件描述：N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W)
器件厂商：FUJI [Fuji Electric]
文件大小：200.52KB，共2页
Sponsor by e络盟器件资料摘要：
2SK1280
N-channel MOS-FET
F-V Series 500V 0,5Ω 18A 150W
>Features > Outline Drawing
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
>Applications
- Motor Control
- Inverters
- Choppers
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
500 V
Continous Drain Current I
D
18 A
Pulsed Drain Current I
D(puls)
72 A
Continous Reverse Drain Current I
DR
18 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
150 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 500 V
Gate Threshhold Voltage V
GS(th)
I
D
=10m A V
DS=
V
GS
2,1 3,0 4,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=500V T
ch
=25°C 10 500 µA
V
GS
=0V
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=9A V
GS
=10V 0,35 0,5 Ω
Forward Transconductance g
fs
I
D
=9A V
DS
=25V 8 15 S
Input Capacitance C
iss
V
DS
=25V 2400 3600 pF
Output Capacitance C
oss
V
GS
=0V 300 450 pF
Reverse Transfer Capacitance C
rss
f=1MHz 150 220 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=300V 35 50 ns
t
r
I
D
=18A 150 220 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 450 650 ns
t
f R GS =25 Ω
180 270 ns
Diode Forward On-Voltage V
SD
I
F
=I
DR
V
GS
=0V T
ch
=25°C 0,85 1,6 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 150 200 ns
-dI
F
/d t =100A/µs T
ch
=25°C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 35 °C/W
R
th(ch-c)
channel to case 0,83 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
F-V Series 500V 0,5Ω 18A 150W
>Features > Outline Drawing
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
>Applications
- Motor Control
- Inverters
- Choppers
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
500 V
Continous Drain Current I
D
18 A
Pulsed Drain Current I
D(puls)
72 A
Continous Reverse Drain Current I
DR
18 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
150 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 500 V
Gate Threshhold Voltage V
GS(th)
I
D
=10m A V
DS=
V
GS
2,1 3,0 4,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=500V T
ch
=25°C 10 500 µA
V
GS
=0V
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=9A V
GS
=10V 0,35 0,5 Ω
Forward Transconductance g
fs
I
D
=9A V
DS
=25V 8 15 S
Input Capacitance C
iss
V
DS
=25V 2400 3600 pF
Output Capacitance C
oss
V
GS
=0V 300 450 pF
Reverse Transfer Capacitance C
rss
f=1MHz 150 220 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=300V 35 50 ns
t
r
I
D
=18A 150 220 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 450 650 ns
t
f R GS =25 Ω
180 270 ns
Diode Forward On-Voltage V
SD
I
F
=I
DR
V
GS
=0V T
ch
=25°C 0,85 1,6 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 150 200 ns
-dI
F
/d t =100A/µs T
ch
=25°C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 35 °C/W
R
th(ch-c)
channel to case 0,83 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com