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2SK1276A

器件描述:N-channel MOS-FET
器件厂商:FUJI [Fuji Electric]
文件大小:201.56KB,共2页
Sponsor by e络盟
器件资料摘要:
2SK1276A
N-channel MOS-FET
F-V Series 250V 0,25Ω 20A 100W
>Features > Outline Drawing
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
>Applications
- Motor Control
- Inverters
- Choppers
>Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
250 V
Drain-Gate-Voltage (R
GS
=20K Ω) V DGR 250 V
Continous Drain Current I
D
20 A
Pulsed Drain Current I
D(puls)
80 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
100 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 250 V
Gate Threshhold Voltage V
GS(th)
I
D
=1m A V
DS=
V
GS
2,1 3,0 4,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=250V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,5 2,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=10A V
GS
=10V 0,16 0,25 Ω
Forward Transconductance g
fs
I
D
=10A V
DS
=25V 6 12 S
Input Capacitance C
iss
V
DS
=25V 1100 1600 pF
Output Capacitance C
oss
V
GS
=0V 240 360 pF
Reverse Transfer Capacitance C
rss
f=1MHz 130 200 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=150V 30 45 ns
t
r
I
D
=20A 50 80 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 200 300 ns
t
f R GS =25 Ω
100 150 ns
Avalanche Capability I
AV
L = 100µH T
ch
=25°C 15 A
Continous Reverse Drain Current I
DR
20 A
Pulsed Reverse Drain Current I
DRM
80 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 0,95 1,8 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 100 150 ns
Reverse Recovery Charge Q
rr
-dI
F
/d t =100A/µs T
ch
=25°C 0,35 µC
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 35 °C/W
R
th(ch-c)
channel to case 1,25 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com