1
Silicon Junction FETs (Small Signal)
unit: mm
2SK123
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
n Features
l High mutual conductance g
m
l Low noise voltage of NV
1: Drain
2: Source
3: Gate
Mini Flat Package (3-pin)
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
DGO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
20
20
2
2
2
200
- 20 to +80
- 55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Current consumption
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
Voltage gain difference
Symbol
I
D
I
DSS
g
m
NV
G
V1
G
V2
G
V3
D |G
V2
- G
V1
|
D |G
V1
- G
V3
|
Conditions
V
D
= 4.5V, C
O
= 10pF, R
D
= 2.2kW ± 1%
V
DS
= 4.5V, V
GS
= 0
V
D
= 4.5V, V
GS
= 0, f = 1kHz
V
D
= 4.5V, R
D
= 2.2kW ± 1%
C
O
= 10pF, A-curve
V
D
= 4.5V, R
D
= 2.2kW ± 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
V
D
= 12V, R
D
= 2.2kW ± 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
V
D
= 1.5V, R
D
= 2.2kW ± 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
min
100
95
0.7
- 3
0
- 4.5
0
0
max
600
480
4
+3.5
+3.5
Unit
m A
m A
mS
m V
dB
dB
dB
dB
dB
typ
1.6
2
3.3
- 0.3
0.4
+
0.1
-
0.05
2.9
+
0.2
-
0.05
0.4
+
0.1
-
0.05
0.16
+
0.1
-
0.06
1.1
+
0.2
-
0.1
0.4
+
0.1
-
0.05
2.4– 0.1 1.9– 0.1
1.9
–
0.2
0.95
0.8
0.95
1.45
1.5
+0.25
- 0.05
5.8
+0.2
- 0.3
1
2
3
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.